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2018
Conference Paper
Titel
In situ load-pull MMIC for large-signal characterization of mHEMT devices at submillimeter-wave frequencies
Abstract
An in situ load-pull MMIC with preamplifier and tunable output matching network in a 35nm InAlAs/InGaAs technology is presented in this paper. The load impedance tuning is realized using an open-circuit stub network with shunt-FETs. The tunable load impedance range and the large signal characterization of a 2x15mm device is demonstrated at 300 GHz. With this MMIC the unique characterization and large signal model validation of mHEMT devices at sub-mm wave frequencies is possible. The total chip area required for large signal characterization of a single device is 1850mm x 400 mm.
Author(s)