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Advanced high power amplifier chain for X-band T/R-modules based on GaN MMICs

Eine neuartige Hochleistungs-Verstärker-Kette für X-Band T/R-Module auf der Basis von GaN HEMTs
 
: Schuh, P.; Leberer, R.; Sledzik, H.; Oppermann, M.; Adelseck, B.; Brugger, H.; Quay, R.; Mikulla, M.; Weimann, G.

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1st European Microwave Integrated Circuits Conference 2006. Proceedings. CD-ROM : EuMIC 2006, September 2006, Manchester
London: Horizon House, 2006
ISBN: 2-9600551-8-7
S.241-244
European Microwave Integrated Circuits Conference (EuMIC) <1, 2006, Manchester>
Englisch
Konferenzbeitrag
Fraunhofer IAF ()
TR module; TR Modul; GaN HEMT; amplifier; Verstärker; x-Band; high frequency; Hochfrequenz; integration; Modulintegration

Abstract
Power amplifiers for a next generation of T/R-modules in future active array antennas are realized as monolithically integrated circuits on the bases of novel AlGaN/GaN HEMT structures. Both, driver and high power amplifiers are designed for X-band frequencies.
The monolithically integrated circuits (MMICs) are designed, simulated and fabricated using a novel via-hole microstrip technology. Output power levels of 1.6 W (32 dBm) for the driver amplifier (DA) and 20 W (43 dBm) for the high power amplifier (HPA) are measured.
An amplifier chain circuitry, with mounted GaN DA and HPA MMICs, is designed based on a multi-layer LTCC technology.

: http://publica.fraunhofer.de/dokumente/N-50353.html