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Design and analysis of a 34 dBm Ka-band GaN high power amplifier MMIC

Entwurf und Analyse eines 34 dBm Ka-Band GaN Hochleistungsverstärker MMICs

: Heijningen, M. van; Vliet, F.E. van; Quay, R.; Raay, F. van; Seelmann-Eggebert, M.

DOI: 10.1109/EMICC.2006.282754

	1st European Microwave Integrated Circuits Conference 2006. Proceedings. CD-ROM : EuMIC 2006, September 2006, Manchester London: Horizon House, 2006 ISBN: 2-9600551-8-7 S.75-78
	European Microwave Integrated Circuits Conference (EuMIC) <1, 2006, Manchester>

	Englisch
	Konferenzbeitrag
	Fraunhofer IAF ()
	design; Entwurf; Ka-Band; driver; Treiber; high-power amplifier; Hochleistungsverstärker; MMIC

Abstract
This paper presents the design and analysis issues related to the use of recent GaN technologies for realizing high power millimeter wave MMICs. Two GaN Ka-band amplifier MMICs have been designed, fabricated and characterized. The small-signal and power measurement results are presented for both amplifiers, with an excellent output power of 34.1 dBm at 27 GHz for the 2-stage power amplifier MMIC. Both MMICs have a very good yield and performance, even more so in regard of the current state-of-the-art. The observed deviations between the original simulation and measurements have been explained by extensive use of 3D EM simulations of the coplanar passive structures.

: http://publica.fraunhofer.de/dokumente/N-50352.html