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0.13-μm SiGe BiCMOS technology with More-than-Moore modules

: Kaynak, M.; Wietstruck, M.; Göritz, A.; Wipf, S.T.; Inac, M.; Cetindogan, B.; Wipf, C.; Kaynak, C.B.; Wöhrmann, M.; Voges, S.; Braun, T.


Institute of Electrical and Electronics Engineers -IEEE-:
IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM 2017 : 19-21 Oct. 2017, Miami, Florida
Piscataway, NJ: IEEE, 2017
ISBN: 978-1-5090-6383-3
ISBN: 978-1-5090-6382-6
ISBN: 978-1-5090-6384-0
Bipolar/BiCMOS Circuits and Technology Meeting (BCTM) <2017, Miami/Fla.>
Fraunhofer IZM ()

This paper presents three different technology modules, integrated into a 0.13-μm SiGe BiCMOS process; namely RF-MEMS switch, microfluidics and heterogeneous integration technologies. The RF-MEMS switch module is optimized for mm-wave applications and offers superior performance figures at D-band with a wafer level encapsulated packaging option. The microfluidics module which is embedded by bonding three different wafers, provides a unique platform of fluid-electronic interaction with possibility of optical observation. Finally, the FOWLP option provides the heterogeneous integration of a single or multi chips in a single package. The BiCMOS process together with the integration of all these modules offers a technology platform to follow the More-than-Moore path for multi-functional and smart systems.