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Ultra-wideband signal generation at 300 GHz in a SiGe BiCMOS technology

: Thomas, S.; Welp, B.; Pohl, N.


Institute of Electrical and Electronics Engineers -IEEE-; Gallium Arsenide Application Symposium Association -GAAS-; IEEE Electron Devices Society:
12th European Microwave Integrated Circuits Conference, EuMIC 2017 : 9-12 October 2017, Nuremberg, Germany
Piscataway, NJ: IEEE, 2017
ISBN: 978-2-87487-048-4
ISBN: 978-1-5386-3966-5
European Microwave Integrated Circuits Conference (EuMIC) <12, 2017, Nuremberg>
European Microwave Week (EuMW) <2017, Nuremberg>
European Microwave Conference (EuMC) <47, 2017, Nuremberg>
Fraunhofer FHR ()

In this paper an ultra high bandwidth signal generation MMIC is presented. Based on an fundamental oscillator working at 75 GHz followed by a two stage frequency quadrupler, an output frequency range from 231.2-309.1 GHz is achieved, resulting in an overall tuning range of almost 78 GHz. The maximum output power of the transmitter MMIC is -2.8 dBm with a power variation of 7.5 dB over the complete 78 GHz tuning range. In combination with a low phase noise of approx. -75 dBc/Hz @ 1 MHz offset of the 300 GHz output signal, various high resolution distance measurements or imaging applications especially in the field of industrial quality assurance or in-line process monitoring become possible. With a power consumption of the complete MMIC of 700 mW at a single supply voltage of 5 V the realization of low-power sensors for industrial use can be achieved. The use of the well-established B11HFC SiGe BiCMOS technology provided by Infineon Technologies AG allows a reliable and cost-effective production as well.