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Influence of triangular defects on the electrical characteristics of 4H-SiC devices

: Schoeck, J.; Schlichting, H.; Kallinger, B.; Erlbacher, T.; Rommel, M.; Bauer, A.J.


Stahlbush, R.:
Silicon Carbide and Related Materials 2017 : International Conference on Silicon Carbide and Related Materials, ICSCRM 2017, September 17-22, 2017, Washington, DC
Durnten-Zurich: TTP, 2018 (Materials Science Forum 924)
ISBN: 978-3-0357-1145-5
ISBN: 978-3-0357-2145-4
ISBN: 978-3-0357-3145-3
International Conference on Silicon Carbide and Related Materials (ICSCRM) <2017, Washington/DC>
Fraunhofer IISB ()
defect; diode; photoluminescence; triangular defect; VDMOS; wafer inspection

Using a combination of photoluminescence and electrical characterization, defects in the epitaxial layer of unipolar 4H-SiC power devices were matched to device characteristics and statistically analyzed. In-grown triangles had no significant effect on diode and VDMOS blocking or conduction mode, while surface triangles lead to high leakage currents even below 1 V reverse bias.