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2006
Journal Article
Titel
GaSb-based 2.X µm quantum-well diode lasers with low beam divergence and high output power
Alternative
GaSb-basierte 2.X µm Diodenlaser mit geringer Strahldivergenz und hoher Ausgangsleistung
Abstract
We report on GaSb-based 2.X µm diode lasers with an improved waveguide design, leading to a reduced beam divergence in the fast axis of 44° full width at half maximum (FWHM), compared to 67° FWHM of a conventional broadened waveguide design. 2.3 µm ridge-waveguide lasers with the improved epitaxial design showed, besides the narrow beam profile in the fast axis, an excellent slow axis beam quality [M(exp 2) <1.1 up to 70 mW, continuous wave (cw)]. 2.0 µm broad-area lasers with the improved waveguide too, exhibit a maximum cw-output power of 1.96 W.
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