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GaSb-based 2.X µm quantum-well diode lasers with low beam divergence and high output power

GaSb-basierte 2.X µm Diodenlaser mit geringer Strahldivergenz und hoher Ausgangsleistung
: Rattunde, M.; Schmitz, J.; Kaufel, G.; Kelemen, M.T.; Weber, J.; Wagner, J.


Applied Physics Letters 88 (2006), Nr.8, Art. 081115, 3 S.
ISSN: 0003-6951
ISSN: 1077-3118
Fraunhofer IAF ()
diode laser; infrared laser; high power laser; GaInAsSb; AlGaAsSb; GaSb; fast axis; beam divergence; beam width; beam quality; M2; Diodenlaser; Infrarot-Laser; Leistungslaser; Strahldivergenz; Strahlbreite; Beugungsmaßzahl

We report on GaSb-based 2.X µm diode lasers with an improved waveguide design, leading to a reduced beam divergence in the fast axis of 44° full width at half maximum (FWHM), compared to 67° FWHM of a conventional broadened waveguide design. 2.3 µm ridge-waveguide lasers with the improved epitaxial design showed, besides the narrow beam profile in the fast axis, an excellent slow axis beam quality [M(exp 2) <1.1 up to 70 mW, continuous wave (cw)]. 2.0 µm broad-area lasers with the improved waveguide too, exhibit a maximum cw-output power of 1.96 W.