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Avalanche multiplication in AlGaN-based heterostructures for the ultraviolet spectral range

: Hahn, Lars; Fuchs, Frank; Kirste, Lutz; Driad, Rachid; Rutz, Frank; Passow, Thorsten; Köhler, Klaus; Rehm, Robert; Ambacher, Oliver


Applied Physics Letters 112 (2018), Nr.15, Art. 151102, 4 S.
ISSN: 0003-6951 (Print)
ISSN: 1077-3118
ISSN: 1931-9401 (online)
Fraunhofer IAF ()

Al(x)Ga(1-x)N based avalanche photodiodes grown on sapphire substrate with Al-contents of x=0.65 and x=0.60 have been examined under back- and frontside illumination with respect to their avalanche gain properties. The photodetectors suitable for the solar-blind ultraviolet spectral regime show avalanche gain for voltages in excess of 30V reverse bias in the linear gain mode. Devices with a mesa diameter of 100 lm exhibit stable avalanche gain below the break through threshold voltage, exceeding a multiplication gain of 5500 at 84V reverse bias. A dark current below 1 pA can be found for reverse voltages up to 60 V.