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Intermetallic compound formation In Au/Al thermosonic wire bonding during high temperature annealing at 150 °C as a function of wire material

: Klengel, R.; Knoll, H.; Petzold, M.; Wohnig, M.; Schräpler, L.


TU Dresden, Institut für Aufbau- und Verbindungstechnik der Elektronik -IAVT-; Institute of Electrical and Electronics Engineers -IEEE-:
1st Electronics Systemintegration Technology Conference, ESTC 2006. Vol.1 : Dresden, 5.-7.9.2006
New York, NY: IEEE, 2006
ISBN: 1-4244-0552-1
ISBN: 1-4244-0533-X
Electronics Systemintegration Technology Conference (ESTC) <1, 2006, Dresden>
Fraunhofer IWM ()
Au-AI intermetallic compound formation; thermosonic wire bonding; high temperature storage (HTS); reliability; Pd-doped wire; high security wire; electron microscopy

The paper is focused on the Au-Al intermetallic compound (IMC) formation and growth as well as the void formation in thermosonic wire bond ball contacts. Three different wire types were bonded on two different Al padmetallization with optimized bonding parameter, stressed by high temperature storage (HTS) conditions at 150°C up to 200 hours and investigated by Light Microscopy (LM), Scanning Electron Microscopy (SEM) in addition to Energy Dispersive X-Ray Analysis (EDX). It was found that the investigated Pd-doped 2N wire exhibited both the lowest IMC growth as well as defect formation rate in comparison to the additionally investigated 4N and 4.5N wires.