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2006
Conference Paper
Titel
Strength characterization of directly bonded silicon
Abstract
In this paper a test wafer for the characterization of the bond quality of directly bonded silicon is described. The 6`` test wafer contains samples for dicing yield, tensile strength and surface energy measurement. The test structures were etched at IZM, provided to different research and idustrial partners and directly bonded a low temperatures and subsequently characterized at the IWMH. The first results of the investigations are presented.
Language
English
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