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A test structure for characterization of the interface energy of anodically bonded silicon-glass wafers

: Knechtel, R.; Knaup, M.; Bagdahn, J.


Bagdahn, J.:
Wafer-Bonding Workshop for MEMS Technologies, WBW-MEMS 2004. Special Issue : 11 - 12 October 2004, Halle: Two-day Workshop on "Wafer Bonding for MEMS Technologies"
Berlin: Springer, 2006 (Microsystem technologies 12.2006,Nr.5)
Wafer-Bonding Workshop for MEMS Technologies (WBW-MEMS) <2004, Halle/Saale>
Konferenzbeitrag, Zeitschriftenaufsatz
Fraunhofer IWM ()
anodic bonding; glass; silicon; test

In this paper a test structure is introduced, which allows the evaluation of the quality of an anodic bond interface in terms of surface energy. It is based on the creation of small non-bonded areas in the vicinity of small steps in the bond interface. Using finite element analysis simulations it was possible to calculate the surface energy of the monitored bonding processes. The test structure was used to investigate the influence of anodic bonding parameters (temperature and voltage) on the surface energy.