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Monolithically integrated power circuits in high-voltage GaN-on-Si heterojunction technology

: Reiner, Richard; Waltereit, Patrick; Weiss, Beatrix; Mönch, Stefan; Wespel, Matthias; Müller, Stefan; Quay, Rüdiger; Ambacher, Oliver


IET power electronics 11 (2018), Nr.4, S.681-688
ISSN: 1755-4535
Fraunhofer IAF ()

This study presents monolithically integrated power circuits, fabricated in a high-voltage GaN-on-Si heterojunction technology. Different advanced concepts are presented and compared with solutions found in the literature. High switching transition slew rates are demonstrated by means of a monolithic power circuit with integrated gate driver. A highly linear temperature sensor is integrated in a GaN-high-electron-mobility transistor (HEMT) power device for the 600 V class and on state resistance of 53 mΩ. An area-efficient HEMT structure with integrated free wheeling diodes is presented. This structure is applied in a monolithic multilevel converter chip, as well as in a 600 V class half-bridge chip. The multilevel chip is integrated by an advanced printed circuit board embedding technology and tested in inverter operation with a mains voltage output of 120VRMS. The performance of the half-bridge is demonstrated in a synchronous buck converter operation from 400 to 200 V and with a switching frequency of 3 MHz.