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Paper No S10.3. Efficiency enhancement of InP-based inverted QD-LEDs by polyethylenimine-modified Al:Zno layer

: Kim, Y.; Ippen, C.; Wedel, A.


Society for Information Display. SID Symposium Digest of Technical Papers 46 (2015), Nr.S1, S.44
ISSN: 2168-0159
ISSN: 0082-0830
EuroDisplay <2015, Gent>
Zeitschriftenaufsatz, Konferenzbeitrag
Fraunhofer IAP ()

In this paper, we report efficiency enhancement of indium phosphide (InP) quantum dot-based light-emitting diodes (QD-LEDs) using polyethylenimine (PEI) surface modifier. Adapting solution processed (PEI) layer on top of the aluminum-doped zinc oxide (Al:ZnO) nanoparticle (NP) layer, the leakage current of inverted device was Suppressed and electron injection into conduction band of InP/ZnSe/ZnS QDs also facililated by interfacial dipoles of thin PEI layer. As a results, the current efficiency was dramatically increased from 0.07 cd/A to 2.84 cd/A.