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Transfer of AlGaN/GaN RF-devices onto diamond substrates via van der Waals bonding

 
: Gerrer, Thomas; Cimalla, Volker; Waltereit, Patrick; Müller, Stefan; Benkhelifa, Fouad; Maier, Thomas; Czap, Heiko; Nebel, Christoph E.; Quay, Rüdiger

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Institute of Electrical and Electronics Engineers -IEEE-; Gallium Arsenide Application Symposium Association -GAAS-; IEEE Electron Devices Society:
12th European Microwave Integrated Circuits Conference, EuMIC 2017 : 9-12 October 2017, Nuremberg, Germany
Piscataway, NJ: IEEE, 2017
ISBN: 978-2-87487-048-4
ISBN: 978-1-5386-3966-5
S.25-28
European Microwave Integrated Circuits Conference (EuMIC) <12, 2017, Nuremberg>
European Microwave Week (EuMW) <2017, Nuremberg>
European Microwave Conference (EuMC) <47, 2017, Nuremberg>
Englisch
Konferenzbeitrag
Fraunhofer IAF ()

Abstract
We present a new bonding process for galliumnitride (AlGaN/GaN) devices from Si onto diamond substrates. In our technology AlGaN/GaN-devices are transferred from silicon (Si) onto single (SCD) and polycrystalline diamond (PCD) substrates by van der Waals bonding. Load-pull measurements on Si and SCD at 3 GHz and 50 V drain bias show comparable power-added-efficiency (PAE) and output power (Pout) levels. Also, comparisons of 2x1 mm GaN-diodes on Si, PCD, and SCD reveal significantly increased power levels. In summary, we show a promising new GaN-on-diamond technology for future high power, microwave GaN-device applications.

: http://publica.fraunhofer.de/dokumente/N-490777.html