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Die-level patterning of parylene F by laser-ablation for further processing with ALD functional layers

 
: Dogan, Özgü; Mokwa, Wilfried; Mai, Lukas; Devi, Anjana; Vogt, Holger

Otto, T. ; Messe Frankfurt; Fraunhofer-Institut für Elektronische Nanosysteme -ENAS-, Chemnitz; Fraunhofer-Institut für Zuverlässigkeit und Mikrointegration -IZM-, Berlin:
Smart Systems Integration 2018. International Conference and Exhibition on Integration Issues of Miniaturized Systems : Dresden, Germany, 11 - 12 April 2018
Auerbach /Vogtl.: Verlag Wissenschaftliche Scripten, 2018
ISBN: 978-3-95735-082-4
ISBN: 3-95735-082-4
S.392-395
International Conference and Exhibition on Integration Issues of Miniaturized Systems <2018, Dresden>
Englisch
Konferenzbeitrag
Fraunhofer IMS ()
Laser-Ablation; die-level patterning; atomic layer deposition (ALD); functional layer; parylene F

Abstract
Die-level patterning of a parylene F coated chip is achieved by short laser pulse ablation. Thus, the insulating polymer is removed selectively and local openings are achieved. Occurring melt-depositions at the cut edges are removed by applying an O2-flash which also thins the parylene layer from approximately 2 μm to 800 nm. Prepared dies are processed further by Atomic Layer Deposition (ALD). A transparent conductive In2O3-layer with a thickness of 45 nm is deposited three dimensionally onto the die so that Inter-Layer-Connections (ILC) with die metallisation are implemented through the opened parylene. Electrical connections through the patterned parylene, which demonstrate reasonable resistance values and non-ohmic behaviour, have been characterised by IV-measurements.

: http://publica.fraunhofer.de/dokumente/N-490750.html