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1996
Journal Article
Titel
Stoichiometry of a-C:H(Ta) films determined by means of RBS and the ¹5N technique
Abstract
The stoichiometry of a-C:H(Ta) films on Si wafer produced by a combined physical- and chemical-vapor-deposition process was determined by means of the ¹5N nuclear resonance reaction technique and Rutherford backscattering spectrometry (RBS). RBS as well as the ¹5N technique need for quantification of the original measurement data the element information from the other technique. Therefore, the data evaluation was performed in an iterative procedure. The carbon content was deduced indirectly from the hydrogen and tantalum contents. It was found that an increase of the tantalum concentration leads to a decrease of the hydrogen and carbon concentration. Only two values for the hydrogen-to-carbon ratio were observed depending on the tantalum concentration. They are correlated with different film structures.