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Fabrication aspects of InP-CAIBE processing for photonic crystal devices

 
: Golka, S.; Janiak, K.; Hensel, H.J.; Heidrich, H.; Schwoob, E.; Benisty, H.

IEEE Lasers and Electro-Optics Society; IEEE Electron Devices Society:
Indium phosphide and related materials : Conference proceedings 2003 International Conference Indium Phosphide and Related Materials. 12 - 16 May 2003, Fess Parker's Doubletree Resort, Santa Barbara, California, USA
Piscataway, NJ: IEEE, 2003
ISBN: 0-7803-7704-4
S.74-77
International Conference on Indium Phosphide and Related Materials (IPRM) <15, 2003, Santa Barbara/Calif.>
Englisch
Konferenzbeitrag
Fraunhofer HHI ()

Abstract
An improved Ar/Cl CAIBE process for the fabrication of InP-based Photonic Crystals (PhCs) is presented. Effects of temperature, ion beam, chlorine flow and other parameters are discussed. In particular feature size effects are investigated on a length scale of 200 to 400 nm required for the realization of infrared photonic band gaps. The potential of CAIBE for fabrication of deep and uniform hole patterns in InP is demonstrated. The good quality of the samples including multi quantum well InGaAsP/InP layers was demonstrated by performing transmission measurements by internal light source technique.

: http://publica.fraunhofer.de/dokumente/N-48769.html