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Wafer slicing

: Struth, Werner F.; Steffens, Klaus; König, Wilfried


Weck, M. ; Association Nationale de la Recherche Technique -ANRT-; Society of Photo-Optical Instrumentation Engineers -SPIE-, Bellingham/Wash.:
Micromachining of elements with optical and other submicrometer dimensional and surface specifications : 2-3 April 1987, The Hague, The Netherlands; Fourth International Symposium on Optical and Optoelectronic Applied Sciences and Engineering
Bellingham/Wash.: SPIE, 1987 (Proceedings of SPIE 803)
ISBN: 0-89252-838-9
Conference "Micromachining of Elements with Optical and other Submicrometer Dimensional and Surface Specifications" <1987, The Hague>
International Symposium on Optical and Optoelectronic Applied Science and Engineering <4, 1987, The Hague>
Fraunhofer IPT ()

Internal Diameter Sawing is the common used technique for slicing hard and brittle materials, such as semiconductive Silicon, Germanium or ceramics and glasses. Nevertheless, productivity and yield are relative low due to the difficult handling of the flexible tool. Increasing workpiece dimensions lead to increasing problems in realizing quality requirements, such as high flatness, low roughness and low crystal damage. The report deals with basic relationships in I D-Sawing, irrespective of workpiece material (geometry and kinematics) as well as respective to monocrystalline Silicon (cutting mechanism, lattice damage, flatness). Finally guidelines are given to improve process reliability.