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High-frequency electrical measurement and parameter extraction of InP-based photodetectors up to 100 GHz

 
: Mekonnen, G.G.; Bach, H.-G.; Beling, A.; Schmidt, D.; Seeger, A.; Stollberg, M.

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European Microwave Association:
33rd European Microwave Conference 2003. Conference Proceedings. Vol.3 : 7 - 9th October 2003, ICM, Munich, Germany; Organized jointly with the GAAS 2003 and the ECWT 2003; Part of European Microwave Week, Munich, 6 - 10th October 2003
London: Korizon House Publications, 2003
ISBN: 1-580-53836-3
S.1397-1400
European Microwave Conference (EuMC) <33, 2003, München>
European Microwave Week <2003, München>
European Gallium Arsenide and Other Compound Semiconductors Application Symposium (GAAS) <11, 2003, München>
Englisch
Konferenzbeitrag
Fraunhofer HHI ()

Abstract
High-frequency measurement and the extraction of an extended small-signal equivalent circuit of a heterostructure InP-based photodiode in the frequency range of 45 MHz to 100 GHz was performed. Photodetectors of this type were monolithically integrated and successfully fabricated to form twin-type photodetector OEICs demonstrating a bandwidth of 45 GHz. The work describes the small-signal equivalent circuit of a photodiode, with a size of 5 µm x 20 µm, up to the frequency range of 100 GHz.

: http://publica.fraunhofer.de/dokumente/N-48743.html