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Effect of substrate termination on switching loss and switching time using 600 V GaN-on-Si HEMTs with integrated gate driver in half-bridges

: Mönch, Stefan; Reiner, Richard; Weiss, Beatrix; Waltereit, Patrick; Quay, Rüdiger; Ambacher, Oliver; Kallfass, Ingmar


Kaplar, B. ; Institute of Electrical and Electronics Engineers -IEEE-; IEEE Power Electronics Society; Power Sources Manufacturers Association -PSMA-; IEEE Electron Devices Society:
WiPDA 2017, 5th Annual IEEE Workshop on Wide Bandgap Power Devices & Applications : Albuquerque, NM, October 30-November 1, 2017
Piscataway, NJ: IEEE, 2017
ISBN: 978-1-5386-3117-1
ISBN: 978-1-5386-3116-4
ISBN: 978-1-5386-3118-8
Workshop on Wide Bandgap Power Devices and Applications (WiPDA) <5, 2017, Albuquerque/NM>
Fraunhofer IAF ()
gallium nitride; substrate potential; integrated circuit; HEMT; driver circuit; lateral device

Lateral GaN-on-Si HEMT technology enables integrated high-voltage half-bridges with gate drivers. However, the capacitive coupling through a common conductive substrate influences switching characteristics. The measured hard-switching turn-on time with floating substrate increased to over 16 ns as compared to conventional source-connected substrate (1 ns), switching 300 V/ 4A with GaN ICs comprising 600V HEMs with integrated single-input depletion-load inverter controlled pull-up driver. Simulations of the GaN IC in half-bridges using a four-terminal transistor model (including substrate capacitances) are first verified by some measurements (real prototypes). Then a comprehensive parameter study is carried out using simulations (virtual prototype) for four half-bridge substrate terminations, two integrated driver circuits, and high/low-side and hard/resonant turn-on/off switching. New insights into coupling effects influencing switching losses and switching time are used to develop a robust IC in terms of capacitive substrate coupling.