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Substrate biasing effects in a high-voltage, monolithically-integrated half-bridge GaN-chip

: Weiss, Beatrix; Reiner, Richard; Polyakov, Vladimir M.; Waltereit, Patrick; Quay, Rüdiger; Ambacher, Oliver; Maksimovic, Dragan


Kaplar, B. ; Institute of Electrical and Electronics Engineers -IEEE-; IEEE Power Electronics Society; Power Sources Manufacturers Association -PSMA-; IEEE Electron Devices Society:
WiPDA 2017, 5th Annual IEEE Workshop on Wide Bandgap Power Devices & Applications : Albuquerque, NM, October 30-November 1, 2017
Piscataway, NJ: IEEE, 2017
ISBN: 978-1-5386-3117-1
ISBN: 978-1-5386-3116-4
ISBN: 978-1-5386-3118-8
Workshop on Wide Bandgap Power Devices and Applications (WiPDA) <5, 2017, Albuquerque/NM>
Fraunhofer IAF ()
lateral device; GaN; IC; half-bridge; monolithic integration; integrated freewheeling diode; high voltage; high frequency; substrate biasing; backgating; crosstalk

This paper investigates substrate biasing effects in a monolithically-integrated half-bridge stage rated for 600 V/20A and fabricated in a lateral AlGaN/GaN-on-Si technology. On resistance degradation effects caused by the common substrate potential are analyzed and explained for the monolithic half-bridge stage operating in a 400V-synchronous buck converter. The detailed analysis of an ungated TLM-structure processed on the same epitaxial stack supports the understanding of physical processes during substrate bias conditions. The findings obtained are then transferred to the half-bridge IC. Finally, mitigation techniques are discussed, and 5 MHz, 400V-to-200V power conversion is demonstrated at a power level of 250W.