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HEMT large-signal integral transform model including trapping and impact ionization

: Raay, Friedbert van; Leuther, Arnulf; Ohlrogge, Matthias; Schwantuschke, Dirk; Schlechtweg, Michael


Institute of Electrical and Electronics Engineers -IEEE-; Gallium Arsenide Application Symposium Association -GAAS-; IEEE Electron Devices Society:
12th European Microwave Integrated Circuits Conference, EuMIC 2017 : 9-12 October 2017, Nuremberg, Germany
Piscataway, NJ: IEEE, 2017
ISBN: 978-2-87487-048-4
ISBN: 978-1-5386-3966-5
European Microwave Integrated Circuits Conference (EuMIC) <12, 2017, Nuremberg>
European Microwave Week (EuMW) <2017, Nuremberg>
European Microwave Conference (EuMC) <47, 2017, Nuremberg>
Fraunhofer IAF ()
Key Publication

A new large-signal FET model is proposed which simultaneously covers trapping, impact ionization, breakdown and thermal effects in an effective analytical channel current formulation. Drain current and charge functions are described using an integral transform of conductances and capacitances. An InAlAs/InGaAs mHEMT extraction example demonstrates a good simultaneous prediction of DC, small-signal and large signal performance of the device in spite of different low frequency dispersion effects which may be related to trapping and impact ionization effects in the device.