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Charge carrier transport mechanisms of passivating contacts studied by temperature-dependent J-V measurements

 
: Feldmann, Frank; Nogay, Gizem; Löper, Phillip; Young, David L.; Lee, Benjamin G.; Stradins, Paul; Hermle, Martin; Glunz, Stefan W.

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Volltext urn:nbn:de:0011-n-4844305 (522 KByte PDF)
MD5 Fingerprint: 51e9aca7ce58ac6d28eaa361ce732978
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Erstellt am: 12.6.2018


Solar energy materials and solar cells 178 (2018), S.15-19
ISSN: 0927-0248
European Commission EC
H2020-Low-cost, low-carbon energy supply - Developing the next generation technologies of renewable electricity and heating/cooling; 727529; DISC
Double side contacted cells with innovative carrier-selective contacts
Englisch
Zeitschriftenaufsatz, Elektronische Publikation
Fraunhofer ISE ()
Solarzellen - Entwicklung und Charakterisierung; Photovoltaik; Silicium-Photovoltaik; Herstellung und Analyse von hocheffizienten Solarzellen; Quantum mechanical tunneling; Passivating contacts; Poly-Si; TOPCon

Abstract
The charge carrier transport mechanism of passivating contacts which feature an ultra-thin oxide layer is investigated by studying temperature-dependent current-voltage characteristics. 4-Terminal dark J-V measurements at low temperatures reveal non-linear J-V characteristics of passivating contacts with a homogeneously grown silicon oxide, which result in an exponential increase in contact resistance towards lower temperature. The attempt to describe the R(T) characteristic solely by thermionic emission of charge carriers across an energy barrier leads to a significant underestimation of the resistance by several orders of magnitude. However, the data can be described properly with the metal-insulator-semiconductor (MIS) theory if tunneling of charge carriers through the silicon oxide layer is taken into account. Furthermore, temperature-dependent light J-V characteristics of solar cells featuring passivating contacts at the rear revealed a FF drop at T < 205 K, which is near the onset temperature of the exponential increase in contact resistivity.

: http://publica.fraunhofer.de/dokumente/N-484430.html