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Fully inkjet-printed thin-film transistor array manufactured on paper substrate for cheap electronic applications

: Mitra, K.Y.; Polomoshnov, M.; Martinez-Domingo, C.; Mitra, D.; Ramon, E.; Baumann, R.R.


Advanced electronic materials 3 (2017), Nr.12, Art. 1700275, 9 S.
ISSN: 2199-160X
Fraunhofer ENAS ()

Over the past decade, inkjet technology has been well recognized for the manufacturing of products that include “printing beyond colors.” This micrometer-scale precise technology provides a straightforward approach toward judicious deposition of electronically functional material inks on various substrates over relatively large areas, for printed/flexible electronics. The technology promotes upscalability and has become a renowned process tool for fabricating electronic devices in the field of printed/flexible electronics. Here, the fabrication of printed thin-film transistors (TFT) on cheap coated paper substrate using inkjet technology is reported. For developing the TFT layer stack conductive nanoparticle inks, a polymeric dielectric ink and a p-type organic semiconductor ink are employed. The coating on the paper provides several advantages for fabrication process of TFTs; for example, control over ink spreading. This control of ink spreading can directly influence the fabrication of interdigitated source/drain (S/D) electrodes for TFTs, when a top gate bottom contact architecture is considered. This results in better manufacturing yields and promising electrical performance, which are also the focus of this research. The all inkjet-printed TFTs on paper exhibit electrical performance with maximum S/D current ranging to 170 nA, charge carrier mobility of 0.087 cm2 V−1 s−1, and current on/off ratio of 330.