Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.

Complementary field-effect transistors for flexible electronics

: Hilleringmann, U.; Vidor, F.F.; Meyers, T.


Du Plessis, M. ; Society of Photo-Optical Instrumentation Engineers -SPIE-, Bellingham/Wash.:
Fourth Conference on Sensors, MEMS, and Electro-Optic Systems 2016 : 18-20 September 2016, Skukuza, Kruger National Park, South Africa
Bellingham, WA: SPIE, 2017 (Proceedings of SPIE 10036)
ISBN: 978-1-5106-0513-8
ISBN: 978-1-5106-0514-5
Paper 100360K, 6 S.
South African Conference on Sensors, MEMS, and Electro-Optic Systems (SMEOS) <4, 2016, Kruger National Park>
Fraunhofer ENAS ()

Key issues for flexible complementary electronics are low temperature processing, sufficient performance of the integrated p- and n-type FET devices, and cheap semiconducting and dielectric materials. Organic semiconductors commonly depict p-type behavior, whereas metal oxide semiconductors show n-type characteristics. This paper presents a new approach for common integration of organic and ZnO transistors on transparent substrates for complementary transistor electronics. The gate dielectric consists of a special high-k resin, the metallization utilizes Au and Al films. The thermal budget for processing of the devices is limited to 120°C to enable foil substrates.