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Low temperature Cu/In bonding for 3D integration

: Panchenko, I.; Bickel, S.; Meyer, J.; Müller, M.; Wolf, J.M.


Institute of Electrical and Electronics Engineers -IEEE-; Components, Packaging and Manufacturing Technology Society -CPMT-, Japan Chapter:
5th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2017. Proceedings : May 16-18, 2017, Ito International Research Center, The University of Tokyo, Tokyo, Japan
Piscataway, NJ: IEEE, 2017
ISBN: 978-1-5386-1598-0
ISBN: 978-4-904743-03-4
ISBN: 978-4-904743-05-8
International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) <5, 2017, Tokyo>
Fraunhofer IZM ()

This study represents the results of Cu/In bonding based on solid-liquid interdiffusion (SLID) principle for 3D integration. Fine-pitch interconnects were successfully fabricated at the bonding temperature of 170 degrees C. The final microstructure of the interconnects consists of Cu and Cu/In intermetallic compounds (IMCs) and it is described in detail. The influence of the isothermal storage on the microstructure development is investigated as well.