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Growth of carbon and nitrogen containing precipitates in crystalline solar silicon and their influence on solar cells

 
: Richter, S.; Bauer, J.; Breitenstein, O.

:

Physica status solidi. Rapid research letters 11 (2017), Nr.2, Art. 1600354, 17 S.
ISSN: 1862-6254
ISSN: 1862-6270
Bundesministerium für Bildung und Forschung BMBF
03IP607; SiThinSolar
Bundesministerium für Umwelt, Naturschutz, Bau und Reaktorsicherheit BMUB
0327650D; SolarFocus
Bundesministerium für Umwelt, Naturschutz, Bau und Reaktorsicherheit BMUB
0325270C; SolarWinS
Bundesministerium für Bildung und Forschung BMBF
03SF0410F; FzSil II
Bundesministerium für Wirtschaft und Technologie BMWi
0325763A; SolarLIFE
Bundesministerium für Wirtschaft und Technologie BMWi
0325763D; SolarLIFE
Englisch
Zeitschriftenaufsatz
Fraunhofer CSP ()

Abstract
The growth mechanisms, structural, mechanical, and electrical properties of silicon carbide and silicon nitride precipitates in solar silicon are reviewed and some new aspects about the distribution of trace elements in these precipitates are reported in this review. SiC and Si3N4 precipitates may have detrimental impact on the quality of solar silicon material. Therefore intensive research has been done at these precipitates in the past, which is summarized first. The properties of the different types of precipitates reported in literature are then described in detail. Especially SiC precipitates may have detrimental impact on the electrical behavior of solar cells by causing severe ohmic shunting. Furthermore SiC precipitates are very hard and may harm the wafering process. An outlook of the impact of such precipitates on new cell concepts and new solar silicon materials, such as n-type, is given.

: http://publica.fraunhofer.de/dokumente/N-480854.html