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2 x 56 GB/s from a double side electroabsorption modulated DFB laser and application in novel optical PAM4 generation

: Theurer, M.; Zhang, H.Y.; Wang, Y.; Chen, W.; Chen, L.; Zeng; Troppenz, U.; Przyrembel, G.; Sigmund, A.; Möhrle, M.; Schell, M.


Journal of Lightwave Technology 35 (2017), Nr.4, S.706-710
ISSN: 0733-8724
Optical Fiber Communication Conference and Exposition (OFC) <2016, Anaheim/Calif.>
Konferenzbeitrag, Zeitschriftenaufsatz
Fraunhofer HHI ()

In this paper, we present a novel device which comprises a DFB laser with electroabsorption modulators integrated on both sides. This integrated chip provides two independently modulated optical outputs from a single laser source and thus cuts the required number of chips for multilane applications in half. Both outputs can be simultaneously operated with 56 Gb/s NRZ leading to 112 Gb/s from a single chip. The performance of the chip is further tested in an optical PAM4 generation experiment. The two NRZ modulated outputs are combined with a polarization combiner to generate an optical PAM4 signal which on the receiver side is measured with a polarization insensitive photodetector.