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2017
Journal Article
Titel
MOVPE Grown Gallium Phosphide-Silicon Heterojunction Solar Cells
Abstract
Gallium phosphide (GaP) is, in theory, a near-ideal heteroemitter for silicon solar cells due to its electronic and crystal properties. In this paper, we present n-type gallium phosphide on p-type silicon heterojunction solar cells which have been prepared by direct growth viametal-organic vapor phase epitaxy (MOVPE). The devices show very promising results in quantum efficiency and current density. However, the open-circuit voltage of 560 mV is far from ideal. The investigation of two different nucleation processes reveals a significant influence of the antiphase domain density at the GaP/Si interface on the open-circuit voltage.
Author(s)
Project(s)
SFB 1083 "Structure and Dynamics of Internal Interfaces"