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Advanced 4H-SiC p-i-n Diode as Highly Sensitive High-Temperature Sensor Up To 460 degrees C

: Matthus, C.D.; Erlbacher, T.; Hess, A.; Bauer, A.J.; Frey, L.


IEEE transactions on electron devices 64 (2017), Nr.8, S.3399-3404
ISSN: 0018-9383
European Commission EC
FP7; 611887; MSP
Fraunhofer IISB ()

In this paper, a highly sensitive linear high-temperature sensor based on a 4H-SiC p-i-n diode is introduced. The sensor offers both a very high sensitivity up to 4.5 mV/degrees C and a high linearity (coefficient of determination R-2 up to 99.96%) for temperatures varying from room temperature up to 460 degrees C. Both parameters, linearity and sensitivity, are current density dependent. The best tradeoff between linearity (R-2 of 99.96%) and sensitivity (4.3 mV/degrees C) was found for an applied current density of 0.7 mu A/cm(2). The proposed type of sensor is suitable for being integrated, e.g., into a smart high-voltage switch. Furthermore, the current transport mechanisms from room up to higher temperatures deduced from the I-V characteristics are discussed, leading to the conclusion that recombination currents are predominant for a wide range of applied current densities. Thus, the increase in the intrinsic carrier concentration dominates the temperature dependence of the saturation current density. If required, applications at even higher temperatures are possible from the semiconductor point of view. But in this case, further optimizations of the manufacturing process for usability for this temperature range are recommended and discussed.