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Dislocation formation in heavily As-doped Czochralski grown silicon

: Stockmeier, Ludwig; Lehmann, Lothar; Miller, Alfred; Reimann, Christian; Friedrich, Jochen

Volltext urn:nbn:de:0011-n-4805430 (748 KByte PDF)
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Erstellt am: 19.3.2019

Crystal research and technology 52 (2017), Nr.8, Art. 1600373, 16 S.
ISSN: 0023-4753
ISSN: 0232-1300
Polish Society for Crystal Growth (International Conference) (ICPSCG) <10, 2016, Zakopane>
European Commission EC
H2020; 662133; PowerBase
Zeitschriftenaufsatz, Konferenzbeitrag, Elektronische Publikation
Fraunhofer IISB ()

During the growth of <100>-oriented, heavily n-type doped silicon crystals by the Czochralski method dislocation formation occurs frequently, leading to a reduction of the crystal yield. Up to now, it is not clear where and why the dislocations form. Therefore, heavily As-doped crystals were studied in this work in more detail by means of X-ray topography (XRT) and synchrotron X-ray topography (SXRT). From the data obtained it is concluded that dislocations form during growth of the top cone of the crystals in the vicinity of one of the four so-called growth ridges.