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Understanding the light-induced degradation at elevated temperatures: Similarities between multicrystalline and floatzone p-type silicon

 
: Niewelt, T.; Schindler, F.; Kwapil, W.; Eberle, R.; Schön, J.; Schubert, M.C.

:

Smets, A.:
33rd European Photovoltaic Solar Energy Conference and Exhibition, EU PVSEC 2017 : Proceedings of the international conference held in Amsterdam, The Netherlands, 25 September - 29 September 2017
München: WIP, 2017
ISBN: 978-3-936338-47-8
ISBN: 3-936338-47-7
S.218-225
European Photovoltaic Solar Energy Conference and Exhibition (EU PVSEC) <33, 2017, Amsterdam>
Englisch
Konferenzbeitrag
Fraunhofer ISE ()
Solarzellen - Entwicklung und Charakterisierung; Photovoltaik; Silicium-Photovoltaik; Charakterisierung von Prozess- und Silicium-Materialien; defects; LeTID; LID

Abstract
This paper discusses degradation phenomena in crystalline silicon. We present new investigations of the light- and elevated temperature induced degradation (LeTID) of multicrystalline silicon. The investigations provide insights into the defect parameters as well as the diffusivity and solubility of impurity species contributing to the defect. We discuss possible defect precursor species and can rule out several metallic impurities. We find that an involvement of hydrogen in the defect could explain the characteristic observations for LeTID. Furthermore, we demonstrate analogies to the light-induced degradation mechanisms at elevated temperatures observed in floatzone silicon, where several experimental results also indicate an involvement of hydrogen in the defect. Based on the similarities between multicrystalline and floatzone silicon we suggest that both degradation phenomena might be caused by the same or similar defects. As we do not expect large concentrations of cobalt in floatzone silicon, we suggest that complexes of intrinsic lattice defects and hydrogen might cause both degradation phenomena.

: http://publica.fraunhofer.de/dokumente/N-477457.html