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Hydrogen-related defects in Al2O3 layers grown on n-type Si by the atomic layer deposition technique

: Kolkovsky, Vladimir; Stübner, Ronald


Physica. B 535 (2018), S.171-174
ISSN: 0921-4526
ISSN: 1873-2135
Fraunhofer IPMS ()
deposition of aluminum oxide thin film; hydrogen; capacitance meter; negative refraction; defect

The electrical properties of alumina films with thicknesses varying from 15 nm to 150 nm, grown by the atomic layer deposition technique on n-type Si, were investigated. We demonstrated that the annealing of the alumina layers in argon (Ar) or hydrogen (H) atmosphere at about 700 K resulted in the introduction of negatively charged defects irrespective of the type of the substrate. These defects were also observed in samples subjected to a dc H plasma treatment at temperatures below 400 K, whereas they were not detected in as-grown samples and in samples annealed in Ar atmosphere at temperatures below 400 K. The concentration of these defects increased with a higher H content in the alumina films. In good agreement with theory we assigned these defects to interstitial H-related defects.