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Bulk lifetime characterization of corona charged silicon wafers with high resistivity by means of microwave detected photoconductivity

 
: Engst, Christian R.; Rommel, Mathias; Bscheid, Christian; Eisele, Ignaz; Kutter, Christoph

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Journal of applied physics 122 (2017), Nr.21, Art. 215704, 12 S.
ISSN: 0021-8979
ISSN: 1089-7550
Englisch
Zeitschriftenaufsatz
Fraunhofer IISB ()
Fraunhofer EMFT ()
charge carrier lifetime; high resistivity; x-ray detector; silicon; SiO2; interface recombination; Corona charging

Abstract
Minority carrier lifetime (lifetime) measurements are performed on corona-charged silicon wafers by means of Microwave Detected Photoconductivity (MDP). The corona charge is deposited on the front and back sides of oxidized wafers in order to adjust accumulation conditions. Once accumulation is established, interface recombination is suppressed and bulk lifetimes are obtained. Neither contacts nor non-CMOS compatible preparation techniques are required in order to achieve accumulation conditions, which makes the method ideally suited for inline characterization. The novel approach, termed ChargedMDP (CMDP), is used to investigate neutron transmutation doped (NTD) float zone silicon with resistivities ranging from 6.0 to 8.2 kOhm*cm. The bulk properties of 150 mm NTD wafers are analyzed in detail by performing measurements of the carrier lifetime and the steady-state photoconductivity at various injection levels. The results are compared with MDP measurements of uncharged wafers as well as to the established charged microwave detected Photoconductance Decay (charge-PCD) method. Besides analyzing whole wafers, CMDP measurements are performed on oxide test-structures on a patterned wafer. Finally, the oxide properties are characterized by means of charge-PCD as well as capacitance-voltage measurements. With CMDP, average bulk lifetimes up to 33.1 ms are measured, whereby significant variations are observed among wafers, which are produced out of the same ingot but oxidized in different furnaces. The observed lifetime variations are assumed to be caused by contaminations, which are introduced during the oxidation process. The results obtained by CMDP were neither accessible by means of conventional MDP measurements of uncharged wafers nor with the established charge-PCD method.

: http://publica.fraunhofer.de/dokumente/N-476922.html