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Carbon-hydrogen related defects in SiGe observed after dc H plasma treatment

: Stübner, Ronald; Kolkovsky, Vladimir; Weber, Jörg; Abrosimov, Nikolay V.


Physica status solidi. A 214 (2017), Nr.7, Art. 1700329, 4 S.
ISSN: 0031-8965
ISSN: 1862-6300
ISSN: 1521-396X
ISSN: 1862-6319
Fraunhofer IPMS ()

In the present study, the electrical and structural properties of two carbon-hydrogen related DLTS levels (E42 and E262) that appear after hydrogen plasma treatment are investigated in diluted Si1−xGex alloys. E42 and E262 were previously observed in pure Si after hydrogenation by a dc hydrogen plasma. They were correlated with different charge states of a carbon–hydrogen complex, where H is located on the anti-bonding position at the carbon atom (CH1AB). By utilizing the Laplace DLTS technique we show that the DLTS peaks E42 and E262 consist of several components in Si1−xGex. These components can be quantitatively explained by the presence of Ge atoms in the first and second nearest-neighborhood of the CH1AB complex. The observed Laplace DLTS spectra indicate a preference of hydrogen to bond to carbon with a Ge atom in its first nearest-neighborhood.