Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.

Switching kinetics in nanoscale hafnium oxide based ferroelectric field-effect transistors

: Mulaosmanovic, Halid; Ocker, Johannes; Müller, Stefan; Schroeder, Uwe; Müller, Johannes; Polakowski, Patrick; Flachowsky, Stefan; Bentum, Ralf van; Mikolajick, Thomas; Slesazeck, Stefan


ACS applied materials & interfaces 9 (2017), Nr.4, S.3792-3798
ISSN: 1944-8244
ISSN: 0013-936X
ISSN: 1944-8252
Fraunhofer IPMS ()

The recent discovery of ferroelectricity in thin hafnium oxide films has led to a resurgence of interest in ferroelectric memory devices. Although both experimental and theoretical studies on this new ferroelectric system have been undertaken, much remains to be unveiled regarding its domain landscape and switching kinetics. Here we demonstrate that the switching of single domains can be directly observed in ultrascaled ferroelectric field effect transistors. Using models of ferroelectric domain nucleation we explain the time, field and temperature dependence of polarization reversal. A simple stochastic model is proposed as well, relating nucleation processes to the observed statistical switching behavior. Our results suggest novel opportunities for hafnium oxide based ferroelectrics in nonvolatile memory devices.