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Design and characterization of a silicon photomultiplier in 0.35 μm CMOS

: D'Ascenzo, Nicola; Brockherde, Werner; Dreiner, Stefan; Schwinger, Alexander; Schmidt, Andrei; Xie, Q.

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IEEE journal of the Electron Devices Society : J-EDS 6 (2018), Nr.1, S.74-80
ISSN: 2168-6734
Zeitschriftenaufsatz, Elektronische Publikation
Fraunhofer IMS ()
photonic; CMOS process; standard; voltage measurement; silicon; photomultiplier; silicon multiplier (SiPM); avalanche breakdown structure; CMOS

The possibility to design a silicon photomultiplier (SiPM) using standard complementary metal oxide semiconductor (CMOS) processes represents the frontier of current low photon flux detectors. It allows an integrated development of both sensor and intelligent read-out electronics on the same technology line and enables to create intelligent devices with on-chip signal processing. We report the design and characterization of a SiPM composed of 20×20 microcells with size 50×50 μm². The device exhibits 200 kHz/mm² dark rate, 10% cross talk probability, 1.5% after pulsing probability and 5.35×10⁶ intrinsic gain at 29 V operational voltage. It is obtained at a 0.35 μm CMOS technology node, which is compatible with the development of integrated electronics. In order to verify the potential application of the device to optical and radiation detection systems, we measure its photon detection efficiency and its response to LED light and scintillation light from an LySO crystal.