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Selectivity issues of MoOx based hole contacts

 
: Neusel, Lisa; Bivour, Martin; Hermle, Martin

:
Volltext urn:nbn:de:0011-n-4738914 (759 KByte PDF)
MD5 Fingerprint: 6de6bf3fd8bf5b451b8aa46ee8700af2
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Erstellt am: 26.1.2018


Energy Procedia 124 (2017), S.425-434
ISSN: 1876-6102
International Conference on Crystalline Silicon Photovoltaics (SiliconPV) <7, 2017, Freiburg>
European Commission EC
H2020; 727529; DISC
Double side contacted cells with innovative carrier-selective contacts
Englisch
Zeitschriftenaufsatz, Konferenzbeitrag, Elektronische Publikation
Fraunhofer ISE ()
Solarzellen - Entwicklung und Charakterisierung; Photovoltaik; Silicium-Photovoltaik; Herstellung und Analyse von hocheffizienten Solarzellen; contact; solar cell; oxide; passivated contact; silicon solar cell; metal oxide

Abstract
Evaporated MoOx was investigated as hole contact for silicon solar cells. To improve understanding of the carrier selectivity of metal oxide based hole contacts the J-V characteristic of simple MoOx-based solar cells was evaluated and different pre and post deposition treatments as well as the influence of the buffer layer for solar cell like precursors were investigated. Further on, the loss of selectivity with annealing was investigated with the same set of samples. While characteristic changes of the optical properties by some treatments indicated the modification of the metal oxides gap states, a clear correlation with the electrical junction properties was not observed. Since none of those treatments showed a beneficial influence on carrier selectivity, further work is needed towards an efficient engineering of the selectivity. However, evaluation of various data showed that the loss of selectivity with annealing is governed by a reduced effective work function of the TMOs.

: http://publica.fraunhofer.de/dokumente/N-473891.html