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Optical stressing of 4H-SiC material and devices

Poster presented at International Conference on Silicon Carbide and Related Materials, ICSCRM 2017, Washington, DC, September 17-22, 2017
 
: Kallinger, Birgit; Kaminzky, Daniel; Berwian, Patrick; Friedrich, Jochen; Oppel, Steffen

:
Poster urn:nbn:de:0011-n-4702857 (616 KByte PDF)
MD5 Fingerprint: a312a8983a1765f75102b1d616f845a9
Erstellt am: 27.10.2017


2017, 1 Folie
International Conference on Silicon Carbide and Related Materials (ICSCRM) <17, 2017, Washington/DC>
Bayerische Forschungsstiftung BFS
AZ-1028-12; SiC-WinS
Englisch
Poster, Elektronische Publikation
Fraunhofer IISB ()
Silicon Carbide (SiC); defect; bipolar degradation; reliability; photoluminescence; imaging

: http://publica.fraunhofer.de/dokumente/N-470285.html