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Influence and mutual interaction of process parameters on the Z1/2 defect concentration during epitaxy of 4H-SiC

Poster presented at ICSCRM 2017, International Conference on Silicon Carbide and Related Materials, Washington, DC, September 17-22, 2017
 
: Erlekampf, Jürgen; Kaminzky, Daniel; Roßhirt, Katharina; Kallinger, Birgit; Rommel, Mathias; Berwian, Patrick; Friedrich, Jochen; Frey, Lothar

:
Poster urn:nbn:de:0011-n-4699350 (1.7 MByte PDF)
MD5 Fingerprint: d0096fd0275696c9b41d1b28bc2693ec
Erstellt am: 10.10.2017


2017, 1 Folie
International Conference on Silicon Carbide and Related Materials (ICSCRM) <2017, Washington/DC>
Englisch
Poster, Elektronische Publikation
Fraunhofer IISB ()

: http://publica.fraunhofer.de/dokumente/N-469935.html