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Iron doping behaviour in InP grown by LP-MOVPE in the presence of tertiarybutylchloride

: Paraskevopoulos, A.; Franke, D.; Harde, P.; Gouraud, S.

IEEE Lasers and Electro-Optics Society; IEEE Electron Devices Society:
Indium phosphide and related materials : Conference proceedings 2003 International Conference Indium Phosphide and Related Materials. 12 - 16 May 2003, Fess Parker's Doubletree Resort, Santa Barbara, California, USA
Piscataway, NJ: IEEE, 2003
ISBN: 0-7803-7704-4
International Conference on Indium Phosphide and Related Materials (IPRM) <15, 2003, Santa Barbara/Calif.>
Fraunhofer HHI ()

Aiming at selective regrowth, the effect of Tertiarybutylchloride (TBC1) on the electrical properties of LP-MOVPE grown Fe-doped InP layers was investigated in dependence of growth temperature and pressure, which varied from 635°C to 700°C and 20 mbar to 100 mbar, respectively. Fe-doping variation from 2·1016 cm-3 to 1·1017 cm-3 resulted in resistivity values in the 108 ?·cm range. In the case of TBC1 addition, enhanced Fe-incorporation was observed, however, resistivity remained in the same range. Thus, TBC1 may be applied for morphology improvement without compromising the semi-insulating behaviour of the InP:Fe material.