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ICP dry etching for InP based photonic bandgap devices

: Wandel, K.; Höhmann, P.; Janiak, K.; Look, J. van

MOC '04, 10th Microoptics Conference. CD-ROM : September 1 - 3, 2004, Friedrich-Schiller-Universität Jena, Germany
Jena: Conventus Congressmanagement & Marketing, 2004
ISBN: 3-8274-1603-5
International Microoptics Conference (MOC) <10, 2004, Jena>
Fraunhofer HHI ()

Periodic nanostructures in InP based epitaxial layers for photonic bandgap materials have to be drilled deep into the substrate for high performance devices. We investigated dry etching using an inductively coupled plasma reactive ion etcher (ICP-RIE) and chemically assisted ion beam etching (CAIBE) for holes in the 300 nm range. Optical measurements on defect waveguides are compared.