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155nm-span multi-wavelength DFB laser array fabricated by selective area growth

: Soares, F.; Baier, M.F.; Zhang, Z.; Gaertner, T.; Franke, D.; Decobert, J.; Achouche, M.; Schmidt, D.; Moehrle, M.; Grote, N.; Schell, M.


Compound Semiconductor Week, CSW 2016 : Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM 2016) & 43rd International Symposium on Compound Semiconductors (ISCS 2016)
Piscataway, NJ: IEEE, 2016
ISBN: 978-1-5090-1964-9 (electronic)
ISBN: 978-1-5090-1965-6 (print)
2 S.
Compound Semiconductor Week (CSW) <2016, Toyama>
International Conference on Indium Phosphide and Related Materials (IPRM) <28, 2016, Toyama>
International Symposium on Compound Semiconductors (ISCS) <43, 2016, Toyama>
European Commission EC
FP7; 257210; PARADIGM
Fraunhofer HHI ()

Selective area growth (SAG) technology has been added to an established InP monolithic integration platform to fabricate arrays of multi-wavelength distributed feedback (DFB) lasers. The local epitaxy growth rate is controlled by the SiO2 mask width, and different quantum well (QW) thicknesses can be obtained in one run. The laser wavelengths span from 1447 nm to 1602 nm. The DFB lasers may include amplifying sections at the front and/or rear side. Output power up to 18 mW is achieved. This technology opens up possibilities to integrate various passive and active components such as lasers, modulators, detectors with different operating wavelengths monolithically on one wafer with less regrowth steps and reduced fabrication complexity.