Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.

A 28nm HKMG super low power embedded NVM technology based on ferroelectric FETs

: Trentzsch, M.; Flachowsky, S.; Richter, R.; Paul, J.; Reimer, B.; Utess, D.; Jansen, S.; Mulaosmanovic, H.; Müller, S.; Slesazeck, S.; Ocker, J.; Noack, M.; Müller, J.; Polakowski, P.; Schreiter, J.; Beyer, S.; Mikolajick, T.; Rice, B.


Fay, P. ; Institute of Electrical and Electronics Engineers -IEEE-:
International Electron Devices Meeting, IEDM 2016. Technical digest : 3-7 December 2016, San Francisco, CA, USA
Piscataway, NJ: IEEE, 2016
ISBN: 978-1-5090-3902-9
ISBN: 978-1-5090-3901-2
ISBN: 978-1-5090-3903-6 (Print)
International Electron Devices Meeting (IEDM) <62, 2016, San Francisco/Calif.>
Fraunhofer IPMS ()

We successfully implemented a one-transistor (1T) ferroelectric field effect transistor (FeFET) eNVM into a 28nm gate-first super low power (28SLP) CMOS technology platform using two additional structural masks. The electrical baseline properties remain the same for the FeFET integration and the JTAG-controlled 64 kbit memory shows clearly separated states. High temperature retention up to 250 degrees C is demonstrated and endurance up to 10(5) cycles was achieved. The FeFET unique properties make it the best candidate for eNVM solutions in sub-2x technologies for low-cost IoT applications.