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Influence of triangular defects on the electrical characteristics of 4H-SiC devices

: Schöck, Johannes; Schlichting, Holger; Kallinger, Birgit; Erlbacher, Tobias; Rommel, Mathias; Bauer, Anton J.

Poster urn:nbn:de:0011-n-4670201 (1019 KByte PDF)
MD5 Fingerprint: b8d4e635c582b9afa981dd3adb5e5d2b
Erstellt am: 27.9.2017

2017, 1 S.
International Conference on Silicon Carbide and Related Materials (ICSCRM) <17, 2017, Washington/DC>
Poster, Elektronische Publikation
Fraunhofer IISB ()
defect; diode; VDMOS; photoluminescence; triangular defect; wafer inspection

Using a combination of photoluminescence and electrical characterization, defects in the epitaxial layer of unipolar 4H-SiC power devices were matched to device characteristics and statistically analyzed. In-grown triangles had no significant effect on diode and VDMOS blocking or conduction mode, while surface triangles lead to high leakage currents even below 1 V reverse bias.