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MOCVD of conductive cubic HfN thin films from Hf(NR2)4 and N,N-dimethylhydrazine

: Kim, Y.; Parala, H.; Bauer, A.J.; Lemberger, M.; Baunemann, A.; Fischer, R.A.

Devi, A. ; Electrochemical Society -ECS-, High Temperature Materials Division:
Fifteenth European Conference on Chemical Vapor Deposition, EUROCVD-15. Proceedings : held from 5th to 9th September 2005 in Bochum, Germany
Pennington, NJ: ECS, 2005 (Electrochemical Society. Proceedings 2005-9)
ISBN: 1-566-77427-6
European Conference on Chemical Vapor Deposition (EUROCVD) <15, 2005, Bochum>
Fraunhofer IISB ()

Hafnium nitride (HfN) films were deposited on Si (100), Si (111), SiO 2/Si (100), and Al2O3 (0001) substrates by metal organic chemical vapor deposition using tetrakis (dimethylamido) hafnium [Hf(NMe2)4] and N,N-dimethylhydrazine (Me 2NNH2) in the temperature range of 600 to 800 °C, The resistivity and morphology of HfN films were strongly dependent on the deposition temperature. Cubic crystalline and conductive HfN film was obtained at 800 °C and exhibited the lowest resistivity of about 1020 ·cm. According to RBS, the HfN film was slightly nitrogen-rich. It was found that both, DMHy as a reaction agent and the high deposition temperature were important factors for the growth of HfN films with promising materials quality.