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InGaAsP/InGaAlAs 1.55 µm strain-compensated MQW BH lasers with 12.5 GHz cut-off frequency at 90 ºC

 
: Möhrle, M.; Mörl, L.; Sigmund, A.; Suna, A.; Reier, F.; Roehle, H.

:

IEEE Lasers and Electro-Optics Society:
IEEE 19th International Semiconductor Laser Conference 2004. Conference digest : 21 - 25 September 2004, Kunibiki Messe, Matsueshi, Simane Pref., Japan
Piscataway, NJ: IEEE Operations Center, 2004
ISBN: 0-7803-8627-2
S.10-11
International Semiconductor Laser Conference (ISLC) <19, 2004, Matsue>
Englisch
Konferenzbeitrag
Fraunhofer HHI ()

Abstract
1.55 µm strain-compensated multi-quan-tum- well buried heterostructure lasers with InGaAsP quantum wells and InGaAlAs barriers were fabricated, yielding high optical power at low threshold currents. At 90 °C they support a direct modulation with 12.5 GHz.

: http://publica.fraunhofer.de/dokumente/N-46501.html