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3D TSV based high frequency components for RF IC and RF MEMS applications

 
: Fernandez-Bolanos, M.; Vitale, W.A.; López, M.M.; Ionescu, A.M.; Klumpp, A.; Merkel, R.; Weber, J.; Ramm, P.; Ocket, I.; Raedt, W. de; Enayati, A.

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Institute of Electrical and Electronics Engineers -IEEE-:
IEEE International 3D Systems Integration Conference, 3DIC 2016 : 8-11 November 2016, San Francisco, California
Piscataway, NJ: IEEE, 2016
ISBN: 978-1-5090-1400-2 (Print)
ISBN: 978-1-5090-1399-9
S.162-165
International 3D Systems Integration Conference (3DIC) <2016, San Francisco/Calif.>
Englisch
Konferenzbeitrag
Fraunhofer EMFT ()

Abstract
We demonstrate and review the unique fine-pitch high-aspect ratio tungsten-filled through-silicon vias (W-TSVs) technology developed by Fraunhofer EMFT in high-resitivity silicon substrates. The proposed process flow is fully compatible with both CMOS and MEMS technology, allowing 3D heterogeneous integration of highperformance, low power, compact tunable RF front-ends. We have assessed the figures of merit of the technology for RF functionality by fabricating and characterizing different configurations for CPWs with TSV transitions, mm-wave antennas and LC resonators as well as record-high performance wideband out-of-plane micro-inductors.

: http://publica.fraunhofer.de/dokumente/N-464517.html