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Novel ferroelectric FET based synapse for neuromorphic systems

: Mulaosmanovic, H.; Ocker, J.; Müller, S.; Noack, M.; Müller, J.; Polakowski, P.; Mikolajick, T.; Slesazeck, S.


Institute of Electrical and Electronics Engineers -IEEE-; IEEE Electron Devices Society:
Symposium on VLSI Technology 2017. Digest of technical papers : June 5-8, 2017, Kyoto
Piscataway, NJ: IEEE, 2017
ISBN: 978-4-86348-605-8
ISBN: 978-1-5090-2989-1 (Print)
Symposium on VLSI Technology <37, 2017, Kyoto>
Fraunhofer IPMS ()

A compact nanoscale device emulating the functionality of biological synapses is an essential element for neuromorphic systems. Here we present for the first time a synapse based on a single ferroelectric FET (FeFET) integrated in a 28nm HKMG technology, having hafnium oxide as the ferroelectric and a resistive element in series. The gradual and non-volatile ferroelectric switching is exploited to mimic the synaptic weight. We demonstrate both the spike-timing dependent plasticity (STDP) and the signal transmission and discuss the effect of the spike properties and circuit design on STDP.