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Tapering of nanoelectrodes for an intracellular contact via a double hard mask technique

 
: Allani, Sonja; Jupe, Andreas; Figge, Martin; Goehlich, Andreas; Vogt, Holger

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PRIME 2017, 13th Conference on Ph.D. Research in Microelectronics and Electronics. Conference proceedings : 12th - 15th of June 2017, Giardini Naxos - Taormina, Italy; 14th International Conference on Synthesis, Modeling, Analysis, and Simulation Methods and Applications to Circuit Design, SMACD 2017
Piscataway, NJ: IEEE, 2017
ISBN: 978-1-5090-5051-2
ISBN: 978-1-5090-6507-3
ISBN: 978-1-5090-6508-0
ISBN: 978-1-5090-6509-7 (Print)
S.305-308
Conference on Ph.D. Research in Microelectronics and Electronics (PRIME) <13, 2017, Taormina>
International Conference on Synthesis, Modeling, Analysis and Simulation Methods and Applications to Circuit Design (SMACD) <14, 2017, Taormina>
Englisch
Konferenzbeitrag
Fraunhofer IMS ()
nanoelectrodes; double hard mask; intracellular contact; nanostructures; tapering; spacing; multi-electrode arrays

Abstract
To realize an intracellular contact between nanoelectrodes and cells, a sufficient small electrode diameter is needed [1]. A sacrificial layer process developed by the Fraunhofer IMS using deep reactive ion etching and atomic layer deposition [2] is varied. A double hard mask technique is used to taper structures in a sacrificial layer and thereby the nanoelectrodes’ diameter. The principles and evaluation of the spacing technique, which allows the fabrication of sublithographic structures, are presented here.

: http://publica.fraunhofer.de/dokumente/N-456167.html